GBU10005 thru gbu1010 pb free plating product GBU10005 thru gbu1010 6.0 ampere glass passivated single phase bridge rectifiers pb ? 1995 thinki semiconductor co., ltd. http://www.thinkisemi.com.tw/ page 1/2 rev.08t features ? plastic material has underwriters laboratory flammability classification 94v-0 ? ideal for printed circuit boards ? glass passivated chip junction ? reliable low cost construction utilizing molded plastic technique mechanical data ? case: molded plastic gbu ? terminals: leads solderable per mil-std-202 method 208 guaranteed ? mounting position: any gbu unit: inch (mm) .880(22.3) .160(4.1) .140(3.56) .040(1.02) .030(0.75) .100(2.54) .080(2.03) .190(4.83) .050(1.27) .080(2.03) .710(18.0) .085(2.16) .310(7.90) .740(18.8) .075(1.90)r .860(21.8) .140(3.5) .130(3.30) .030(0.76) .017(0.45) .085(2.16) .065(1.65) .210(5.33) .040(1.02) .060(1.52) .690(17.5) .065(1.65) .290(7.40) .720(18.3) ~ ~ maximum ratings and el ectrical characteristics (@t a = +25c, unless otherwise specified.) single phase, half wave, 60hz, re sistive or inductive load. for capacitive load, derate current by 20%. characteristic symbol gbu 10005 gbu 1001 gbu 1002 gbu 1004 gbu 1006 gbu 1008 gbu 1010 unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 50 100 200 400 600 800 1000 v rms reverse voltage v r ( rms ) 35 70 140 280 420 560 700 v average forward rectified current (note 4) @ t c = +100 c i ( av ) 10 a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load i fsm 220 a forward voltage (per element) @ i f = 5.0a v fm 1.0 v peak reverse current at rated dc blocking voltage @ t c = +25 c @ t c = +125 c i r 5.0 500 a i 2 t rating for fusing (note 5) i 2 t 200 a 2 s typical total capacitance per element (note 6) c t 60 pf typical thermal resistance junction to case (note 4) r jc 2.2 c/w operating and storage temperature range t j, t stg -55 to +150 c notes: 4. unit mounted on 100mm x 100mm x 1.6mm copper plate heatsink. 5. non-repetitive, for t > 1.0ms and < 8.3ms. 6. measured at 1.0mhz and appl ied reverse voltage of 4.0v dc. 4 4
? 1995 thinki semiconductor co., ltd. http://www.thinkisemi.com.tw/ page 2/2 rev.08t 0 2 4 6 8 10 05 01 0 01 5 0 i, av g f o r wa r d r e c t i f ied c u r r e n t (a) (av) t , case temperature ( c) figure 1 forward current derating curve c resistive or inductive load 0.1 1.0 10 100 0.2 0 0.6 1.0 1.8 i, i n s t a n t a n e o u s f o r wa r d c u r r e n t (a) f v , instantaneous forward voltage (v) figure 2 typical forward characteristics, per element f t = 25c j 1.4 0 100 200 250 110100 i, p eak f o r wa r d s u r g e c u r r e n t (a) fsm number of cycles at 60hz figure 3 maximum non-repetitive surge current single half-sine wave t = 25c j 150 50 1,000 0.1 1.0 10 100 c , t o t al c a p a c i t an c e (p f ) t v , reverse voltage (v) figure 4 typical total capacitance, per element r t = 25c j f = 1.0mhz 100 10 GBU10005 thru gbu1010
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